![]() ![]() Instabilitiesġ0.2 Transistor Thermal Equivalent Circuitġ0.4 Principle of Least Entropy Generation. Microwave Transistorsĩ.1 Bipolar Power Transistors Frequency Responseĩ.2 Bipolar Power Transistors Switching TransientĬhapter 10 Transistor Thermal Properties. Bipolar Transistor ModelsĬhapter 7 Current Gain at High Carrier Concentrationsħ.1 Emitter Efficiency versus Emitter Concentrationħ.4 Current Gain Fall-Off at High CurrentsĬhapter 8 Current-Voltage Characteristics of Power TransistorsĨ.3 Collector-to-Emitter Breakdown VoltageĬhapter 9 Frequency Response. Table of ContentsĬhapter 1 Semiconductor Surface Theory Conceptsġ.4 Threshold Voltage for Strong Inversionġ.5 Threshold Voltage under Nonequilibrium Conditionsġ.6 Channel Charge under Strong Inversion in Nonequilibriumġ.10 Impurity Redistribution at the Oxidized Silicon SurfaceĬhapter 2 Semiconductor Properties at High Carrier ConcentrationsĢ.3 Mobility versus Impurity ConcentrationĢ.4 Carrier Lifetime at High Injection LevelsĢ.5 Carrier Concentration Effect on Silicon Energy Band Gap NarrowingĢ.6 Intrinsic Carrier Concentration at High Doping Levelsģ.1 Avalanche Breakdown Voltage Calculationsģ.3 Plane (One-Dimensional) Junction Breakdownģ.5 Avalanche Breakdown Voltage Temperature DependenceĬhapter 4 Avalanche Breakdown Improvement MethodsĤ.3 Equipotential Ring and Channel StopperĤ.8 Substrate Etch Termination versus Positive BevelingĤ.9 Depletion Region Charge Control by Ion ImplantationĬhapter 5 Selected Fabrication Techniquesĥ.5 Surface Stability and Device PassivationĬhapter 6 Power Transistor Structures. ![]() The reader should have some familiarity with small signal transistor physics as the presentation is at the senior undergraduate or first-year graduate level. This book is written for electrical engineers who design power transistor circuits, device physicists and designers, and university students. Part III discusses junction field-effect and surface field-effect transistors. Part II deals with bipolar transistors and the basic structures of power transistors. It also discusses the effect of high carrier concentration on the semiconductor properties. Part I examines general considerations and reviews semiconductor surface theory as a background to understanding surface phenomena. The book provides an up-to-date account of the progress made in power transistor design. It deals with bipolar devices as well as field-effect power transistors. ![]() Our product offerings include millions of PowerPoint templates, diagrams, animated 3D characters and more.Field-Effect and Bipolar Power Transistor Physics introduces the physics of operation of power transistors. is brought to you by CrystalGraphics, the award-winning developer and market-leading publisher of rich-media enhancement products for presentations. Then you can share it with your target audience as well as ’s millions of monthly visitors. We’ll convert it to an HTML5 slideshow that includes all the media types you’ve already added: audio, video, music, pictures, animations and transition effects. You might even have a presentation you’d like to share with others. ![]() And, best of all, it is completely free and easy to use. Whatever your area of interest, here you’ll be able to find and view presentations you’ll love and possibly download. It has millions of presentations already uploaded and available with 1,000s more being uploaded by its users every day. is a leading presentation sharing website. Cannot be used in parallel due to problems of.Controlled turn-on turn-off characteristics.The load resistance RC should satisfy the.Steady State Characteristics of Power Transistor Steady State Characteristics of Signal level Insulated gate bi-polar transistors (IGBTs).Switching speeds are higher than Thyristors.Used as switches in dc-ac and dc-dc converters.Structural features of power transistors.Power Electronics by Mohan / Undreland / Robbins. ![]()
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